Transition in plastic deformation of nanolayered thin films: Role of interfaces and temperature

Insights into the parameters governing the plasticity of immiscible, nanocrystalline metals stacked in the form of layers are pivotal both from scientific and applications’ perspectives. An outstanding case consists of the contact metallurgy of pure copper used ubiquitously as metallic interconnects in electronic devices. Diffusion barrier layers such W or TiN are necessary to prevent undesirable diffusion of Cu into the Si-based device during synthesis and service. Also, supersaturated Cu-Cr alloys are desirable for improving the strength, while retaining optimal functional properties required for the application. The scientific curiosity lies in understanding the effects of reducing microstructural length scales on the mechanical properties of both of these materials at elevated temperatures. In addition, alternate layering with an immiscible element forms a viable solution to the difficultly in synthesis and application of pure nanocrystalline materials due to their poor microstructural stability. The mechanical behavior of several nanolayered thin films consisting of soft and relatively hard metals or brittle ceramics have been extensively studied at ambient conditions [1-3] by using various models predicting strength as function of grain size or layer thickness. But, few have investigated the elevated temperature mechanical response [4] of similar systems and have been restricted to a specific metal (Al) – ceramic (SiC) combination [5]. This presentation attempts to highlight the role of interfaces and diffusion in plastic flow and failure of mutually immiscible, nanolayered systems at elevated temperatures. The nanolayered thin films consist of mainly sub-100 nm thick layers of pure Cu sandwiched by layers of pure metals of Cr and W and a pure ceramic of TiN, which were grown on Si(100) substrates to thickness of 2-5 μm by using direct current magnetron sputtering. The mechanical response at elevated temperatures of the films was studied by compressing micropillars, which were fabricated using a focused Ga+ beam, in situ SEM using an AlemnisÒ indenter modified for high temperature testing. Lateral flow of Cu promoted by stress-assisted diffusion at homologous temperatures as low as 0.35 occurred in all three systems in contrast to interfacial shear-dominated flow at lower temperatures (Fig. 1). Predictions of discrete dislocation and continuum plasticity models were used to evaluate the change in the yield strengths of the films with respect to the layer thicknesses of Cu in the different systems

Microstructure and residual stress evolution in nanocrystalline Cu–Zr thin films

Grazing incidence X-ray diffraction (GIXRD) and scanning transmission electron microscopy (STEM) combined with energy dispersive X-ray spectroscopy (EDS) were employed to study the microstructure evolution and stress development in the nanocrystalline Cu100−X-ZrX (2.5 at ≤ x ≤ 5.5 at) alloy thin films. Small Zr additions to Cu led to significant lattice parameter anisotropy in the as-deposited Cu-Zr thin films both due to macroscopic lattice strain and stacking faults in the Cu matrix. Strain free lattice parameters obtained after the XRD stress analysis of Cu-Zr thin films confirmed formation of a supersaturated substitutional Cu-Zr solid solution. For the first time, the study of film microstructure by XRD line profile analysis (XLPA) confirmed progressive generation of dislocations and planar faults with increasing Zr composition in Cu-Zr alloy films. These microstructural changes led to the generation of tensile stresses in the thin films along with considerable stress gradients across the films thicknesses which are quantified by the traditional dψhkl−Sin2ψ and GIXRD stress measurement methods. The origin of tensile stresses and stress gradients in the Cu-Zr film are discussed on the basis of film growth and heterogeneous microstructure with changing Zr composition. © 202

Dual phase patterning during a congruent grain boundary phase transition in elemental copper

The phase behavior of grain boundaries can have a strong influence on interfacial properties. Little is known about the emergence of grain boundary phases in elemental metal systems and how they transform. Here, we observe the nanoscale patterning of a grain boundary by two alternating grain boundary phases with distinct atomic structures in elemental copper by atomic resolution imaging. The same grain boundary phases are found by computational grain boundary structure search indicating a first-order transformation. Finite temperature atomistic simulations reveal a congruent, diffusionless transition between these phases under ambient pressure. The patterning of the grain boundary at room temperature is dominated by the grain boundary phase junctions separating the phase segments. Our analysis suggests that the reduced mobility of the phase junctions at low temperatures kinetically limits the transformation, but repulsive elastic interactions between them and disconnections could additionally stabilize the pattern formation

Dielectrophoretic assembly of high-density arrays of individual graphene devices for rapid screening

We establish the use of dielectrophoresis for the directed parallel assembly of individual flakes and nanoribbons of few-layer graphene into electronic devices. This is a bottom-up approach where source and drain electrodes are prefabricated and the flakes are deposited from a solution using an alternating electric field applied between the electrodes. These devices are characterized by scanning electron microscopy, atomic force microscopy, Raman spectroscopy, and electron transport measurements. They are electrically active and their current carrying capacity and subsequent failure mechanism is revealed. Akin to carbon nanotubes, we show that the dielectrophoretic deposition is self-limiting to one flake per device and is scalable to ultralarge-scale integration densities, thereby enabling the rapid screening of a large number of devices

Discovery of benzo[g]indol-3-carboxylates as potent inhibitors of microsomal prostaglandin E(2) synthase-1.

Selective inhibition of pro-inflammatory prostaglandin (PG)E2 formation via microsomal PGE2 synthase-1 (mPGES-1) might be superior over inhibition of all cyclooxygenase (COX)-derived products by non-steroidal anti-inflammatory drugs (NSAIDs) and coxibs. We recently showed that benzo[g]indol-3-carboxylates potently suppress leukotriene biosynthesis by inhibiting 5-lipoxygenase. Here, we describe the discovery of benzo[g]indol-3-carboxylates as a novel class of potent mPGES-1 inhibitors (IC50 ≥ 0.1 μM). Ethyl 2-(3-chlorobenzyl)-5-hydroxy-1H-benzo[g]indole-3-carboxylate (compound 7a) inhibits human mPGES-1 in a cell-free assay (IC50 = 0.6 μM) as well as in intact A549 cells (IC50 = 2 μM), and suppressed PGE2 pleural levels in rat carrageenan-induced pleurisy. Inhibition of cellular COX-1/2 activity was significantly less pronounced. Compound 7a significantly reduced inflammatory reactions in the carrageenan-induced mouse paw edema and rat pleurisy. Together, based on the select and potent inhibition of mPGES-1 and 5-lipoxygenase, benzo[g]indol-3-carboxylates possess potential as novel anti-inflammatory drugs with a valuable pharmacological profile